キーワード: GaN

5 件のレコードが見つかりました。

paper.pdf
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
ジャーナル論文
著者
Takayoshi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Masataka Imura (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Yuichi Oshima (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI
キーワード
GaN, AlInN, etching, positive bevel edge termination
刊行年月日
2024-08-01
更新時刻
2024-08-02 12:30:52 +0900

Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
ジャーナル論文
著者
Yoshihiro Irokawa (author) (この著者で検索)
ORCID SAMURAI ;
Toshihide Nabatame (author) (この著者で検索)
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
ORCID SAMURAI ;
Yasuo Koide (author) (この著者で検索)
ORCID SAMURAI
キーワード
GaN
刊行年月日
2024-08-01
更新時刻
2024-09-02 12:30:27 +0900

Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
ジャーナル論文
著者
色川 芳宏 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
大井 暁彦 (author) (この著者で検索)
National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
ORCID SAMURAI ;
生田目 俊秀 (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
ORCID SAMURAI ;
小出 康夫 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI
キーワード
GaN, hydrogen, Schottky barrier height
刊行年月日
2024-04-01
更新時刻
2024-04-10 16:30:21 +0900

Irokawa_2026_ECS_J._Solid_State_Sci._Technol._15_055002.pdf
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
ジャーナル論文
著者
ORCID SAMURAI ;
Mamoru Usami (author) (この著者で検索)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI
キーワード
GaN
刊行年月日
2026-05-01
更新時刻
2026-05-13 10:14:20 +0900

Okumura_2023_Jpn._J._Appl._Phys._62_064001 (1).pdf
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
ジャーナル論文
著者
Hironori Okumura (author) (この著者で検索)
;
Yohei Ogawara (author) (この著者で検索)
;
Manabu Togawa (author) (この著者で検索)
;
Masaya Miyahara (author) (この著者で検索)
;
Tadaaki Isobe (author) (この著者で検索)
;
Kosuke Itabashi (author) (この著者で検索)
;
Jiro Nishinaga (author) (この著者で検索)
;
Masataka Imura (author) (この著者で検索)
ORCID SAMURAI
キーワード
Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
刊行年月日
2023-06-01
更新時刻
2024-08-24 08:30:18 +0900