4 records found.
Dual-Step Chemical Treatment of Wafer-Scale Metal–Organic Chemical Vapor Deposition Grown Monolayer Molybdenum Disulfides
- Journal article
- Creator
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;Juhwan Lim (author) (Search by this author);Anh Tuấn Hoàng (author) (Search by this author);Zhaojun Li (author) (Search by this author);Tran Thi Ngoc Van (author) (Search by this author);Jung-In Lee (author) (Search by this author);Kihyun Lee (author) (Search by this author);Nicolas Gauriot (author) (Search by this author);Kyle Frohna (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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;Bonggeun Shong (author) (Search by this author);Kwanpyo Kim (author) (Search by this author);Samuel D. Stranks (author) (Search by this author);Jong-Hyun Ahn (author) (Search by this author);Manish Chhowalla (author) (Search by this author)Akshay Rao (author) (Search by this author) - Keyword
- molybdenum disulfide (MoS2) , MOCVD, chemical treatment
- Date published
- 2025-10-07
- Updated at
- 2026-02-17 08:30:32 +0900
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- Journal article
- Creator
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Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
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;Keisuke Atsumi (author) (Search by this author)Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
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Jun Nara (author) (Search by this author)National Institute for Materials Science
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Akihiro Ohtake (author) (Search by this author)National Institute for Materials Science
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;Yuki Ono (author) (Search by this author);Takashi Matsumoto (author) (Search by this author);Yukihiro Muta (author) (Search by this author);Kai Takeda (author) (Search by this author);Emi Kano (author) (Search by this author);Toshiki Yasuno (author) (Search by this author);Xu Yang (author) (Search by this author);Nobuyuki Ikarashi (author) (Search by this author);Asato Suzuki (author) (Search by this author);Michio Ikezawa (author) (Search by this author);Shuhong Li (author) (Search by this author);Tomonori Nishimura (author) (Search by this author);Kaito Kanahashi (author) (Search by this author)Kosuke Nagashio (author) (Search by this author)
- Keyword
- MoS2, epitaxial growth, MOCVD
- Date published
- 2026-01-21
- Updated at
- 2026-01-29 16:30:04 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- Journal article
- Creator
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;Hironori Okumura (author) (Search by this author);Yohei Ogawara (author) (Search by this author);Manabu Togawa (author) (Search by this author);Masaya Miyahara (author) (Search by this author);Tadaaki Isobe (author) (Search by this author);Kosuke Itabashi (author) (Search by this author);Jiro Nishinaga (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
- Keyword
- Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
- Date published
- 2023-06-01
- Updated at
- 2024-08-24 08:30:18 +0900
High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications
- Journal article
- Creator
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Liwen Sang (author) (Search by this author)National Institute for Materials Science
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Meiyong Liao (author) (Search by this author)National Institute for Materials Science
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Masatomo Sumiya (author) (Search by this author)National Institute for Materials Science
;
;Xuelin Yang (author) (Search by this author)Bo Shen (author) (Search by this author)
- Keyword
- High-pressure, MOCVD, InGaN
- Date published
- 2021-12-01
- Updated at
- 2024-12-17 16:30:45 +0900