Juhwan Lim
;
Anh Tuấn Hoàng
;
Zhaojun Li
;
Tran Thi Ngoc Van
;
Jung-In Lee
;
Kihyun Lee
;
Nicolas Gauriot
;
Kyle Frohna
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kenji Watanabe
(National Institute for Materials Science)
;
Bonggeun Shong
;
Kwanpyo Kim
;
Samuel D. Stranks
;
Jong-Hyun Ahn
;
Manish Chhowalla
;
Akshay Rao
説明:
(abstract)Two-dimensional (2D) transition metal dichalcogenides (TMDs) possess remarkable optical and electronic properties, making them a promising candidate for optoelectronic applications. Recently, major advances in the wafer-scale growth of TMDs using the Metal-Organic Chemical Vapor Deposition (MOCVD) have enabled their integration with standard electronics. However, such materials continue to suffer from defects and unwanted doping, which lower semiconductor performance, as exemplified by poor photoluminescence (PL) yield. Chemical treatment protocols have been shown to improve PL yield in exfoliated and CVD-grown materials. Here, using optical and Raman microscopy, X-ray Photoemission Spectroscopy (XPS) and Density Functional Theory (DFT) calculations, we develop chemical treatment protocols for wafter-scale MOCVD-grown monolayer MoS2. The post-growth treatment use sulfide and TFSI- based ionic salts delivered via a solution process. We demonstrate a substantial PL enhancement ranging from 23 to 50 times, depending on the underlying MOCVD growth method of the MoS2. We present design rules for tuning chemical treatment protocols, depending on the defect densities and doping levels, allowing for successful passivation and large PL enhancements, across different growth conditions. Our results demonstrate the versatility of these chemical treatment protocols and their potential to improve PL in device-relevant wafer-scale MOCVD-grown monolayer TMDs.
権利情報:
キーワード: molybdenum disulfide (MoS2) , MOCVD, chemical treatment
刊行年月日: 2025-10-07
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1021/acsnano.5c08927
関連資料:
その他の識別子:
連絡先:
更新時刻: 2026-02-17 08:30:32 +0900
MDRでの公開時刻: 2026-02-16 18:00:50 +0900
| ファイル名 | サイズ | |||
|---|---|---|---|---|
| ファイル名 |
lim-et-al-2025-dual-step-chemical-treatment-of-wafer-scale-metal-organic-chemical-vapor-deposition-grown-monolayer.pdf
(サムネイル)
application/pdf |
サイズ | 7.41MB | 詳細 |