Article Dual-Step Chemical Treatment of Wafer-Scale Metal–Organic Chemical Vapor Deposition Grown Monolayer Molybdenum Disulfides

Juhwan Lim ; Anh Tuấn Hoàng ; Zhaojun Li ; Tran Thi Ngoc Van ; Jung-In Lee ; Kihyun Lee ; Nicolas Gauriot ; Kyle Frohna ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Bonggeun Shong ; Kwanpyo Kim ; Samuel D. Stranks ; Jong-Hyun Ahn ; Manish Chhowalla ; Akshay Rao

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Juhwan Lim, Anh Tuấn Hoàng, Zhaojun Li, Tran Thi Ngoc Van, Jung-In Lee, Kihyun Lee, Nicolas Gauriot, Kyle Frohna, Takashi Taniguchi, Kenji Watanabe, Bonggeun Shong, Kwanpyo Kim, Samuel D. Stranks, Jong-Hyun Ahn, Manish Chhowalla, Akshay Rao. Dual-Step Chemical Treatment of Wafer-Scale Metal–Organic Chemical Vapor Deposition Grown Monolayer Molybdenum Disulfides. ACS Nano. 2025, 19 (39), 34698-34707. https://doi.org/10.1021/acsnano.5c08927

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(abstract)

Two-dimensional (2D) transition metal dichalcogenides (TMDs) possess remarkable optical and electronic properties, making them a promising candidate for optoelectronic applications. Recently, major advances in the wafer-scale growth of TMDs using the Metal-Organic Chemical Vapor Deposition (MOCVD) have enabled their integration with standard electronics. However, such materials continue to suffer from defects and unwanted doping, which lower semiconductor performance, as exemplified by poor photoluminescence (PL) yield. Chemical treatment protocols have been shown to improve PL yield in exfoliated and CVD-grown materials. Here, using optical and Raman microscopy, X-ray Photoemission Spectroscopy (XPS) and Density Functional Theory (DFT) calculations, we develop chemical treatment protocols for wafter-scale MOCVD-grown monolayer MoS2. The post-growth treatment use sulfide and TFSI- based ionic salts delivered via a solution process. We demonstrate a substantial PL enhancement ranging from 23 to 50 times, depending on the underlying MOCVD growth method of the MoS2. We present design rules for tuning chemical treatment protocols, depending on the defect densities and doping levels, allowing for successful passivation and large PL enhancements, across different growth conditions. Our results demonstrate the versatility of these chemical treatment protocols and their potential to improve PL in device-relevant wafer-scale MOCVD-grown monolayer TMDs.

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Keyword: molybdenum disulfide (MoS2)
, MOCVD, chemical treatment

Date published: 2025-10-07

Publisher: American Chemical Society (ACS)

Journal:

  • ACS Nano (ISSN: 19360851) vol. 19 issue. 39 p. 34698-34707

Funding:

  • Engineering and Physical Sciences Research Council EP/W017091/1
  • Royal Society WRM\FT\180009
  • UK Research and Innovation EP/Y015584/1
  • Faraday Institution EP/S003053/1
  • Faraday Institution FIRG012
  • Faraday Institution FIRG014
  • Faraday Institution FIRG018
  • H2020 European Research Council 758826 (SOLARX)
  • H2020 European Research Council GA 101019828-2D- LOTTO

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1021/acsnano.5c08927

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Updated at: 2026-02-17 08:30:32 +0900

Published on MDR: 2026-02-16 18:00:50 +0900

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