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We report on the growth of 0.3-1 μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms. The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same. The phase separations are inhibited when the growth pressure is higher than atmospheric pressure, leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN.

権利情報:

• In Copyright
  

キーワード: High-pressure, MOCVD, InGaN

刊行年月日: 2021-12-01

出版者: Elsevier BV

掲載誌:

• Fundamental Research (ISSN: 26673258) vol. 3 issue. 3 p. 403-408

研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5164

公開URL: https://doi.org/10.1016/j.fmre.2021.11.024

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更新時刻: 2024-12-17 16:30:45 +0900

MDRでの公開時刻: 2024-12-17 16:30:45 +0900