Article High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications

Liwen Sang ORCID (National Institute for Materials Science) ; Meiyong Liao SAMURAI ORCID (National Institute for Materials Science) ; Masatomo Sumiya SAMURAI ORCID (National Institute for Materials Science) ; Xuelin Yang ; Bo Shen

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Liwen Sang, Meiyong Liao, Masatomo Sumiya, Xuelin Yang, Bo Shen. High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications. Fundamental Research. 2021, 3 (3), 403-408. https://doi.org/10.1016/j.fmre.2021.11.024
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(abstract)

We report on the growth of 0.3-1 μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms. The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same. The phase separations are inhibited when the growth pressure is higher than atmospheric pressure, leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN.

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Keyword: High-pressure, MOCVD, InGaN

Date published: 2021-12-01

Publisher: Elsevier BV

Journal:

  • Fundamental Research (ISSN: 26673258) vol. 3 issue. 3 p. 403-408

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Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5164

First published URL: https://doi.org/10.1016/j.fmre.2021.11.024

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Updated at: 2024-12-17 16:30:45 +0900

Published on MDR: 2024-12-17 16:30:45 +0900

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