3 records found.
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- Journal article
- Creator
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Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Takaaki Mano (author) (Search by this author)National Institute for Materials Science
;
;Yuri Itokazu (author) (Search by this author)Masafumi Jo (author) (Search by this author) - Keyword
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- Date published
- 2026-03-21
- Updated at
- 2026-04-03 09:31:08 +0900
High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications
- Journal article
- Creator
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Liwen Sang (author) (Search by this author)National Institute for Materials Science
;
Meiyong Liao (author) (Search by this author)National Institute for Materials Science
;
Masatomo Sumiya (author) (Search by this author)National Institute for Materials Science
;
;Xuelin Yang (author) (Search by this author)Bo Shen (author) (Search by this author)
- Keyword
- High-pressure, MOCVD, InGaN
- Date published
- 2021-12-01
- Updated at
- 2024-12-17 16:30:45 +0900
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
- Journal article
- Creator
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;Yudai Yamaguchi (author) (Search by this author);Yuya Kanitani (author) (Search by this author);Yoshihiro Kudo (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
;
Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
;
Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
;
Shigetaka Tomiya (author) (Search by this author)
- Keyword
- InGaN, dislocation, pipe diffusion, atom probe tomography, transmission electron microscopy
- Date published
- 2022-09-14
- Updated at
- 2024-01-05 22:12:51 +0900