Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

Journal article

Creator

Yuhao Shi (author) (Search by this author)

https://orcid.org/0000-0002-7956-193X (unauthenticated)

Yuhao Shi ;

Masatake Tsuji (author) (Search by this author)

https://orcid.org/0000-0002-3404-6037 (unauthenticated)

Masatake Tsuji ;

Hanjun Cho (author) (Search by this author)

https://orcid.org/0009-0009-2834-8846 (unauthenticated)

Hanjun Cho ;

Shigenori Ueda (author) (Search by this author)

https://orcid.org/0000-0001-9425-0614

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Shigenori Ueda ;

Junghwan Kim (author) (Search by this author)

https://orcid.org/0000-0001-9168-6260 (unauthenticated)

Junghwan Kim ;

Hideo Hosono (author) (Search by this author)

https://orcid.org/0000-0001-9260-6728

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Hideo Hosono

Keyword

oxide semiconductors, IGZO, thin-film transistors, contact resistance, palladium, hydrogen

Date published

2024-04-02

Updated at

2024-04-08 16:30:22 +0900