Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator

Journal article

Creator

Yosuke Sasama (author) (Search by this author)

https://orcid.org/0000-0002-8358-6101

NIMS Researchers Directory SAMURAI

Yosuke Sasama ;

Takuya Iwasaki (author) (Search by this author)

https://orcid.org/0000-0002-1103-2433

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Takuya Iwasaki ;

Mohammad Monish (author) (Search by this author)

https://orcid.org/0000-0002-2352-2640

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Mohammad Monish ;

Kenji Watanabe (author) (Search by this author)

https://orcid.org/0000-0003-3701-8119

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Kenji Watanabe ;

Takashi Taniguchi (author) (Search by this author)

https://orcid.org/0000-0002-1467-3105

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Takashi Taniguchi ;

Yamaguchi Takahide (author) (Search by this author)

https://orcid.org/0000-0003-0208-7317

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Yamaguchi Takahide

Keyword

Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode

Date published

2024-08-26

Updated at

2024-09-12 16:30:45 +0900