Download file (4.84MB)
Download as zip (4.7MB)

コレクション

引用

説明:

We show that the transconductance of multilayer WSe₂ field-effect transistors serves as a direct electrical spectrometer of the intervalley relaxation time τ_iv, previously accessible only by ultrafast optical techniques. Extending an equilibrium valley-thermodynamics framework with a single relaxation equation for the Γ-valley carrier fraction f_Γ(t), we predict three signatures: (i) a Lorentzian transconductance g_m(ω) = g_m,0 + g⁰_m,v/(1 + iωτ_iv), whose imaginary part peaks at ω_c = τ_iv⁻¹ with opposite signs for bilayer and trilayer; (ii) a two-stage current transient after a gate step, exhibiting bilayer overshoot or trilayer undershoot; and (iii) sweep-rate-proportional hysteresis whose gate-voltage profile and layer-number sign reversal distinguish valley from trap-induced dynamics. All three signatures provide quantitative electrical access to τ_iv with standard rf and dc instrumentation.

権利情報:

• In Copyright
  

  ©2026 American Physical Society

キーワード: Intervalley relaxation, Valley dynamics, Valleytronics, Multilayer WSe2, Two-dimensional semiconductors, Transconductance spectroscopy, Field-effect transistors

刊行年月日: 2026-08-28

出版者: American Physical Society (APS)

掲載誌:

• Physical Review B (ISSN: 24699950) vol. 114 issue. 10 105421

研究助成金:

• Japan Society for the Promotion of Science JP25K01609
• Japan Society for the Promotion of Science JP22H05473
• Japan Society for the Promotion of Science JP21H01019
• Japan Science and Technology Agency JPMJCR19T1
• Sumitomo Foundation 2401203

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6491

公開URL: https://doi.org/10.1103/p8mx-dr9j

関連資料:

その他の識別子:

連絡先:

更新時刻: 2026-08-31 10:59:17 +0900

MDRでの公開時刻: 2026-08-31 12:26:11 +0900