- Creative Commons BY Attribution 4.0 International (21)
- In Copyright (10)
- Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (7)
- Creative Commons BY-NC Attribution-NonCommercial 4.0 International (1)
- Creative Commons BY-NC-SA Attribution-NonCommercial-ShareAlike 4.0 International (1)
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
- Journal article
- Creator
-
Toshihide Nabatame (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
;
Yoshihiro Irokawa (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
;Tomomi Sawada (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science;Hiromi Miura (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science;Manami Miyamoto (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials ScienceTakashi Onaya (author) (Search by this author)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
;
Kazuhito Tsukagoshi (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
- Keyword
- Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
- Date published
- 2026-06-01
- Updated at
- 2026-08-18 11:30:17 +0900
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- Journal article
- Creator
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Kazuki Koreishi (author) (Search by this author)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (Search by this author)
;
Takuto Soma (author) (Search by this author)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (Search by this author)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (Search by this author)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- Keyword
- Ga2O3, Wide bandgap, Bandgap engineering
- Date published
- 2026-07-06
- Updated at
- 2026-08-06 09:39:59 +0900
Photoelectron Holographic Study of Atomic Structure of Si Dopants for Si-doped κ-Ga2O3(001)
- Journal article
- Creator
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;Yoshiyuki YAMASHITA (author) (Search by this author);Yuhua TSAI (author) (Search by this author);Yusuke HASHIMOTO (author) (Search by this author);Tomohiro MATSUSHITA (author) (Search by this author)Piero MAZZOLINI (author) (Search by this author)
- Keyword
- Photoelectron Holography, Ga2O3, dopant
- Date published
- 2026-07-10
- Updated at
- 2026-08-05 15:56:53 +0900
HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
- Journal article
- Creator
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Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, (−112), HVPE, HCl gas etching
- Date published
- 2026-12-31
- Updated at
- 2026-07-16 10:12:49 +0900
(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, (011), AFM, TEM
- Date published
- 2026-07-15
- Updated at
- 2026-07-09 10:29:39 +0900
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, wet etching, TMAH
- Date published
- 2026-12-31
- Updated at
- 2026-06-11 15:11:01 +0900
High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces
- Journal article
- Creator
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Takayuki Harada (author) (Search by this author)
;
Takuro Nagai (author) (Search by this author)
;
Kohei Sasaki (author) (Search by this author)
https://orcid.org/0000-0002-8923-7703
(unauthenticated)
- Keyword
- Thin film, Ga2O3, Delafossite, Power devices, Schottky
- Date published
- 2026-06-01
- Updated at
- 2026-06-10 14:51:59 +0900
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH
- Date published
- 2026-02-01
- Updated at
- 2026-02-25 12:30:03 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author)
- Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900
Mapping primary crystallographic planes in β -Ga 2 O 3 based on a pseudo-cubic oxygen sublattice
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, fcc
- Date published
- 2026-02-16
- Updated at
- 2026-02-18 16:30:08 +0900