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説明:

We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams at the glancing incidence. We have investigated the high depth resolution Auger depth profiling analysis with the inclined specimen holder. In consequence, the resulting depth resolution for the GaAs/AlAs superlattice was found to be independent of the sputtered depth. The highest depth resolution of 1.7 nm was achieved with the Al-LVV Auger peak. The Auger depth profiles of the Si/Ge multiple delta-doped layers revealed that the Ge monolayer can be measured in-depth profiled with high sensitivity using this inclined specimen holder.

権利情報:

キーワード: Auger Depth Profiling Analysis, Si/Ge multiple delta-doped layers, GaAs/AlAs Superlattice, Inclined Holder

刊行年月日: 2011-10-24

出版者: The Surface Science Society of Japan

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研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI:

公開URL: https://doi.org/10.1380/jsssj.32.664

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更新時刻: 2024-01-05 22:14:10 +0900

MDRでの公開時刻: 2021-11-16 19:30:53 +0900