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We developed a 85°-high-angle inclined specimen holder which enabled the specimen surface to be irradiated by both electron and ion beams at the glancing incidence. We have investigated the high depth resolution Auger depth profiling analysis with the inclined specimen holder. In consequence, the resulting depth resolution for the GaAs/AlAs superlattice was found to be independent of the sputtered depth. The highest depth resolution of 1.7 nm was achieved with the Al-LVV Auger peak. The Auger depth profiles of the Si/Ge multiple delta-doped layers revealed that the Ge monolayer can be measured in-depth profiled with high sensitivity using this inclined specimen holder.

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Keyword: Auger Depth Profiling Analysis, Si/Ge multiple delta-doped layers, GaAs/AlAs Superlattice, Inclined Holder

Date published: 2011-10-24

Publisher: The Surface Science Society of Japan

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Manuscript type: Author's original (Submitted manuscript)

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First published URL: https://doi.org/10.1380/jsssj.32.664

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Updated at: 2024-01-05 22:14:10 +0900

Published on MDR: 2021-11-16 19:30:53 +0900