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Description:

A Cu(In,Ga)Se2 (CIGS) semiconductor has been widely developed as a solar cell. It is known to have a radiation damage recovery mechanism brought about by a process of thermal annealing. We investigated the radiation damage recovery mechanism though two irradiation experiments at HIMAC and CYRIC. In the HIMAC experiment, a 2 μm-thick CIGS detector was irradiated with a 400 MeV/u Xe ion (132Xe+54) beam, and the collected charge from Xe signal was observed. After Xe beam irradiation with a dose of 0.6 MGy, collected charge from the Xe beam was deteriorated to 51% of initial state. However, it recovered to 97% after 2 h dark annealing at 130 ◦C. In the CYRIC experiment, 70 MeV protons with a fluence of 7.5×1015 MeV neq∕cm2 were irradiated to CIGS solar cells. After dark annealing at 130 ◦C for 1 h, a short circuit current density (JSC) recovered from 57% to 85% of the initial state. On the other hand, it took about 34 h for the JSC to recover from 50% to 85% at 90 ◦C. From these two irradiation experiments, it appeared that the radiation damage recovery mechanism is effective for the CIGS detector, the amount of recovery having a strong dependence on annealing temperature.

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: Cu(In, Ga)Se2, Radiation tolerance, Radiation detector

Date published: 2024-07-20

Publisher: Elsevier BV

Journal:

• NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (ISSN: 01689002) vol. 1067 169637

Funding:

• Government of Japan Ministry of Education Culture Sports Science and Technology
• Japan Society for the Promotion of Science

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4723

First published URL: https://doi.org/10.1016/j.nima.2024.169637

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Updated at: 2024-09-04 09:31:35 +0900

Published on MDR: 2026-07-20 08:27:11 +0900