High Quality Factor Single-Crystal Diamond NEMS Cantilevers Fabricated by A Smart-Cut Method

Guo Chen; Wen Zhao; Keyun Gu; Satoshi Koizumi; Yasuo Koide; Meiyong Liao

Poster High Quality Factor Single-Crystal Diamond NEMS Cantilevers Fabricated by A Smart-Cut Method

Guo Chen (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science) ; Wen Zhao (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science) ; Keyun Gu (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science) ; Satoshi Koizumi (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science) ; Yasuo Koide (Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science) ; Meiyong Liao (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)

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Guo Chen, Wen Zhao, Keyun Gu, Satoshi Koizumi, Yasuo Koide, Meiyong Liao. High Quality Factor Single-Crystal Diamond NEMS Cantilevers Fabricated by A Smart-Cut Method. https://doi.org/10.48505/nims.5490

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In this work, we investigated the resonance properties of SCD NEMS and their energy dissipation mechanisms at nanoscale. First, the SCD MEMS cantilevers with different length were fabricated by the smart-cut technique based on our previous work [4], as shown in Fig.1 (a). Oxygen etching was developed to fabricate nanometer-thick SCD NEMS. Through the high-temperature oxygen annealing (685°C, 80 hours) and reactive ion etching (RIE) for 10.5 minutes, the thickness of SCD MEMS resonators was successfully reduced from micro to nanoscale (sub 100 nm). As depicted in Fig.1 (b), the results shows that when the thickness of the SCD cantilevers was reduced from approximately 450 nm to 50 nm, the Q-factor decreased with the thickness from 105 to 104, achieving SCD NEMS cantilevers with a thickness of approximately 50 nm and a high Q-factor (> 50,000). The force sensitivity of the NEMS cantilever was 10 times improved to be ~10-17 N/Hz1/2. This work provides a new method for the fabrication of high sensitivity SCD NEMS sensors.

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