Article HCl-gas etching of (001) β-Ga2O3 under oxygen supply

Yuichi Oshima SAMURAI ORCID (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science) ; Takayoshi Oshima SAMURAI ORCID (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)

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Yuichi Oshima, Takayoshi Oshima. HCl-gas etching of (001) β-Ga2O3 under oxygen supply. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS. 2025, 26 (1), . https://doi.org/10.1080/14686996.2025.2546285

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(abstract)

O2供給下で(001) β-Ga2O3のHClガスエッチングを行い、O2供給分圧やエッチング温度が平坦面のエッチレートや表面粗さに与える影響を明らかにした。また、選択エッチング技術を用いて横方向のエッチレートやその異方性がO2供給分圧やエッチング温度にどのような影響を受けるのかも明らかにした。

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Keyword: Ga2O3, etching, plasma-free

Date published: 2025-12-31

Publisher: Taylor & Francis

Journal:

  • SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (ISSN: 18785514) vol. 26 issue. 1

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1080/14686996.2025.2546285

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Updated at: 2025-09-04 12:30:19 +0900

Published on MDR: 2025-09-04 12:20:11 +0900

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