Journal article Room temperature large magnetodielectric and magnetoimpedance in (NiMnFeAlZn)3O4 high entropy oxide
Alok Kumar Sahu (author) (Search by this author)
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Sananda Das (author) (Search by this author)
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Sanjay Tamang (author) (Search by this author)
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Perumal Alagarsamy (author) (Search by this author)
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Citation
Alok Kumar Sahu, Sananda Das, Sanjay Tamang, Y. K. Takahashi, Perumal Alagarsamy. Room temperature large magnetodielectric and magnetoimpedance in (NiMnFeAlZn)3O4 high entropy oxide. Applied Physics Letters. 2025, 127 (23), 231903. https://doi.org/10.1063/5.0304241

Description:

(abstract)

In this study, the correlation between the structural and functional landscape of spinel-structured (NiMnFeAlZn)3O4 HEO, prepared using the solid state synthesis method, is explored for the first time through systematic investigations of its structural, microstructural, electronic, magnetic, dielectric, and impedance properties. Such studies revealed a large MD (10.3%) and MZ (-13%). Interestingly, this study not only broadens the fundamental understanding of intrinsic couplings between magnetic and electric ordering but also highlights the importance of harnessing these couplings for suitable applications, including electromagnetic shielding, non-volatile memory devices, antennas, sensors, and energy-efficient spintronic systems.

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  • In Copyright

    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Alok Kumar Sahu, Sananda Das, Sanjay Tamang, Y. K. Takahashi, Perumal Alagarsamy; Room temperature large magnetodielectric and magnetoimpedance in (NiMnFeAlZn)3O4 high entropy oxide. Appl. Phys. Lett. 8 December 2025; 127 (23): 231903 and may be found at https://doi.org/10.1063/5.0304241.

Keyword: High entropy oxide, Spinel, Site occupancy, Magnetodielectric, Magnetoimpedance

Date published: 2025-12-08

Publisher: AIP Publishing

Journal:

  • Applied Physics Letters (ISSN: 00036951) vol. 127 issue. 23 231903

Funding:

  • Science and Engineering Research Board CRG/2022/002284
  • Department of Science and Technology, Ministry of Science and Technology, India SR/ S2/ CMP-19/ 2006
  • Department of Science and Technology, Ministry of Science and Technology, India SR/ FST/ PII-020/ 2009
  • Department of Science and Technology, Ministry of Science and Technology, India SR/FST/PSII-037/2016
  • Human Resource Development Group 03(1166)/10/EMR-II

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6235

First published URL: https://doi.org/10.1063/5.0304241

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Updated at: 2026-03-31 08:41:05 +0900

Published on MDR: 2026-03-31 12:24:54 +0900

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