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Thermoelectric power generation is a promising technology that can directly convert thermal energy into electrical energy and is expected to be applied as power supplies for low-power electronic devices such as sensors. In particular, planar-type devices fabricated based on lithography processes not only enable significant device miniaturization and lower cost but also take advantage of materials with smaller dimensions, such as thin films and nanowires, which have attracted much attention in recent years. Silicon germanium (SiGe) is a promising thermoelectric material due to its relatively high power factor, low thermal conductivity, and compatibility with standard top-down fabrication process.
We design and fabricate a planar-type thermoelectric generator with a double cavity structure using a 240 nm thick Si0.8Ge0.2 thin film and report its performance improvement. When the temperature difference is applied to the device, the measured power density of 100 µWcm−2 was achieved at ∆T = 15 K, namely, the performance normalized by the applied temperature was 0.43 µWcm−2K−2. Finally, the dependence of the device performance on SiGe film thicknessis discussed. The results from our simulation show that a maximum performance of 1.75 µWcm−2K−2 can be achieved by the current device structure, indicating the potential for future applications as thermoelectric energy harvesters.

権利情報:

• In Copyright
  

キーワード: thermoelectric

刊行年月日: 2024-03-18

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 124 issue. 12 123902

研究助成金:

• Core Research for Evolutional Science and Technology JP-MJCR19Q3
• JST-Mirai Program JPMJMI19A1
• Japan Society for the Promotion of Science 21H04635

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.4616

公開URL: https://doi.org/10.1063/5.0191450

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更新時刻: 2024-08-01 16:30:16 +0900

MDRでの公開時刻: 2024-08-01 16:30:16 +0900