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説明:

We investigate the contact resistance of twisted bilayer graphene devices encapsulated by hexagonal boron nitride (hBN). Encapsulation ensures an atomically flat interface that supports emerging new states in twistronics, but it also necessitates an etch step to expose the graphene for electrical contacts. The dry-etch process by sulfur hexafluoride (SF6) etches hBN but stops on graphene. In our case, graphene only serves as an imperfect etch mask, resulting in a porous structure in graphene after the SF6 etch, possibly due to inadvertent residual oxygen during the etch process. We investigate electrical contacts to graphene surfaces exposed by this process. Etched pores expose edges which participate in the contact, which combined with fluorination of the graphene surface, provide variables for optimizing contact resistance.

権利情報:

• In Copyright
  

  This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1557/s43580-025-01276-x.

キーワード: Twisted bilayer graphene, Contact resistance, Hexagonal boron nitride

刊行年月日: 2025-05-13

出版者: Springer Science and Business Media LLC

掲載誌:

• MRS Advances (ISSN: 27315894) vol. 10 issue. 10 p. 1271-1276

研究助成金:

• Small Business Innovative Research and Small Business Technology Transfer W911NF-23-C-0027
• Florida High Tech Corridor Council

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1557/s43580-025-01276-x

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更新時刻: 2026-07-03 13:07:31 +0900

MDRでの公開時刻: 2026-07-03 14:29:37 +0900