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Description:

We investigate the contact resistance of twisted bilayer graphene devices encapsulated by hexagonal boron nitride (hBN). Encapsulation ensures an atomically flat interface that supports emerging new states in twistronics, but it also necessitates an etch step to expose the graphene for electrical contacts. The dry-etch process by sulfur hexafluoride (SF6) etches hBN but stops on graphene. In our case, graphene only serves as an imperfect etch mask, resulting in a porous structure in graphene after the SF6 etch, possibly due to inadvertent residual oxygen during the etch process. We investigate electrical contacts to graphene surfaces exposed by this process. Etched pores expose edges which participate in the contact, which combined with fluorination of the graphene surface, provide variables for optimizing contact resistance.

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• In Copyright
  

  This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1557/s43580-025-01276-x.

Keyword: Twisted bilayer graphene, Contact resistance, Hexagonal boron nitride

Date published: 2025-05-13

Publisher: Springer Science and Business Media LLC

Journal:

• MRS Advances (ISSN: 27315894) vol. 10 issue. 10 p. 1271-1276

Funding:

• Small Business Innovative Research and Small Business Technology Transfer W911NF-23-C-0027
• Florida High Tech Corridor Council

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1557/s43580-025-01276-x

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Updated at: 2026-07-03 13:07:31 +0900

Published on MDR: 2026-07-03 14:29:37 +0900