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The surface morphology of the homoepitaxial layer grown on a (011) β-Ga2O3 substrate by HCl-based halide vapor phase epitaxy was investigated using atomic force microscopy and transmission electron microscopy. The surface consisted of (110) and (−134) facets elongated along [111], with a facet coverage ratio of 0.210:0.790, in close agreement with the geometrically expected ratio of 0.219:0.781. Thus, the surface can be regarded as being composed of (110) macrosteps and (−134) terraces. These findings indicate that growth
kinetics and impurity incorporation should be discussed based on the actual (110) and (−134) faceted morphology, rather than the nominal (011) substrate orientation.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Ga2O3, (011), AFM, TEM

Date published: 2026-07-15

Publisher: IOP Publishing

Journal:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 65 issue. 13 138001

Funding:

• New Energy and Industrial Technology Development Organization JPNP22007

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.35848/1347-4065/ae83f5

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Updated at: 2026-07-09 10:29:39 +0900

Published on MDR: 2026-07-09 12:30:27 +0900