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説明:

In nanoscale semiconductor devices, electrical conductivity is significantly influenced by inherent disorder. This study examines the electrical transport properties of a single-layer MoS2 field-effect transistor on a few-layered hBN substrate. Temperature-dependent transport measurements reveal that electrical conductivity is predominantly governed by a combination of simple activated and variable-range hopping mechanisms. The calculations on the experimental data yield a localization length around 5 nm for a typical defect density near the Fermi energy as 10¹⁴ eV⁻¹ cm⁻². Additionally, optoelectronic transport measurements exhibit temperature-dependent persistent photoconductivity, attributed to electron localization within defect states. Calculations based on the temperature-dependent photoconductivity relaxation indicate a localization length of 7 nm, suggesting a direct correlation between the two phenomena.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Article that appeared in final form in ACS Applied Materials & Interfaces, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acsami.5c08111.

キーワード: MoS₂ field-effect transistor, Variable-range hopping, Persistent photoconductivity

刊行年月日: 2025-07-25

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 17 issue. 31 p. 44816-44248 acsami.5c08111

研究助成金:

• Gandhi Institute of Technology and Management
• Ministry of Education, Culture, Sports, Science and Technology
• Department of Science and Technology, Ministry of Science and Technology, India SUR/2022/000935
• Ministry of Education, Culture, Sports, Science and Technology JPMJCR24A5
• Department of Science and Technology, Ministry of Science and Technology, India
• Ministry of Education, Culture, Sports, Science and Technology 21H05233
• Ministry of Education, Culture, Sports, Science and Technology 23H02052
• Ministry of Education, India

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1021/acsami.5c08111

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更新時刻: 2026-07-27 09:46:50 +0900

MDRでの公開時刻: 2026-07-27 12:27:56 +0900