Journal article Correlating Carrier Localization to Optoelectronic Behavior of Monolayer MoS2
Arup Singha (author) (Search by this author)
;
Aparna P (author) (Search by this author)
;
Agniva Paul (author) (Search by this author)
;
Sanjitha K. Shetty (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
ORCID https://orcid.org/0000-0003-3701-8119
National Institute for Materials Science
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID https://orcid.org/0000-0002-1467-3105
National Institute for Materials Science
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI ;
Arindam Ghosh (author) (Search by this author)
;
Sreemanta Mitra (author) (Search by this author)
2025A01223G_Role_of_carrier_localization_on_the_optoelectronic_transport_in_single_layer_Mos2__SreemantaMitra_.pdf
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Citation
Arup Singha, Aparna P, Agniva Paul, Sanjitha K. Shetty, Kenji Watanabe, Takashi Taniguchi, Arindam Ghosh, Sreemanta Mitra. Correlating Carrier Localization to Optoelectronic Behavior of Monolayer MoS2. ACS Applied Materials & Interfaces. 2025, 17 (31), acsami.5c08111. https://doi.org/10.1021/acsami.5c08111

Description:

(abstract)

In nanoscale semiconductor devices, electrical conductivity is significantly influenced by inherent disorder. This study examines the electrical transport properties of a single-layer MoS2 field-effect transistor on a few-layered hBN substrate. Temperature-dependent transport measurements reveal that electrical conductivity is predominantly governed by a combination of simple activated and variable-range hopping mechanisms. The calculations on the experimental data yield a localization length around 5 nm for a typical defect density near the Fermi energy as 1014 eV−1 cm−2. Additionally, optoelectronic transport measurements exhibit temperature-dependent persistent photoconductivity, attributed to electron localization within defect states. Calculations based on the temperature-dependent photoconductivity relaxation indicate a localization length of 7 nm, suggesting a direct correlation between the two phenomena.

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  • In Copyright

    This document is the Accepted Manuscript version of a Published Article that appeared in final form in ACS Applied Materials & Interfaces, copyright © 2025 American Chemical Society. To access the final published article, see https://doi.org/10.1021/acsami.5c08111.

Keyword: MoS₂ field-effect transistor, Variable-range hopping, Persistent photoconductivity

Date published: 2025-07-25

Publisher: American Chemical Society (ACS)

Journal:

  • ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 17 issue. 31 p. 44816-44248 acsami.5c08111

Funding:

  • Gandhi Institute of Technology and Management
  • Ministry of Education, Culture, Sports, Science and Technology
  • Department of Science and Technology, Ministry of Science and Technology, India SUR/2022/000935
  • Ministry of Education, Culture, Sports, Science and Technology JPMJCR24A5
  • Department of Science and Technology, Ministry of Science and Technology, India
  • Ministry of Education, Culture, Sports, Science and Technology 21H05233
  • Ministry of Education, Culture, Sports, Science and Technology 23H02052
  • Ministry of Education, India

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1021/acsami.5c08111

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Updated at: 2026-07-27 09:46:50 +0900

Published on MDR: 2026-07-27 12:27:56 +0900

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