論文 Enhancement of interfacial thermal conductance by introducing carbon vacancy at the Cu/diamond interface

Kongping Wu ; Leng Zhang ; Fangzhen Li ; Liwen Sang ORCID (National Institute for Materials ScienceROR) ; Meiyong Liao SAMURAI ORCID (National Institute for Materials ScienceROR) ; Kun Tang ; Jiandong Ye ; Shulin Gu

コレクション

引用
Kongping Wu, Leng Zhang, Fangzhen Li, Liwen Sang, Meiyong Liao, Kun Tang, Jiandong Ye, Shulin Gu. Enhancement of interfacial thermal conductance by introducing carbon vacancy at the Cu/diamond interface. Carbon. 2024, 223 (), 119021. https://doi.org/10.1016/j.carbon.2024.119021
SAMURAI

説明:

(abstract)

Effective heat dissipation of semiconductor devices is crucial for their extended lifespan and operational stability, and the interface of semiconductors provides an effective window for thermal design and management. In this work, we have systematically investigated the effect of the carbon vacancy on the thermal conductivity of diamond and the interface thermal conductance (ITC) of Cu/diamond by using both first-principles calculation and molecular dynamics methods. Although the carbon vacancy leads to a decrease in the thermal conductivity of diamond, a marked increase in ITC from 37.98 MWm-2K-1 to about 177 MWm-2K-1 for diamond (1 1 1)plane and from 78.8 MWm-2K-1 to about 241 MW/m -2K-1 for diamond (0 0 1) plane is observed between Cu and diamond with carbon vacancy. The increase of the ITC is mainly due to the anharmonic phonon scattering, revealed by the phonon density of states and phonon participation ratio.

権利情報:

キーワード: Diamond, thermal conductivity, Cu

刊行年月日: 2024-03-05

出版者: Elsevier BV

掲載誌:

  • Carbon (ISSN: 00086223) vol. 223 119021

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4667

公開URL: https://doi.org/10.1016/j.carbon.2024.119021

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更新時刻: 2026-03-06 16:30:04 +0900

MDRでの公開時刻: 2026-03-06 12:58:03 +0900

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