Publication
Auger Depth Profile Analysis of GaAs/AIAs Thin Film by Synthesized Spectrum Method Using Non-Negative Least Square Curve Fitting
MDR Open Deposited
We have carried out the Auger depth profiling analysis of GaAs/AIAs multilayer structure using the peaks of GaMVV and A1LVV. Since the two peaks of the specimen overlapped each other, we made peak separation with peak synthesis technique using a non-negative least-square curve fit containing a peak-shift correction. The top-hat filtered spectra were used for the calculation to remove their background. This procedure gave excellent results for the peak separation especially for the sample which had a large difference in elemental concentration.
- Alternative title
- 非負拘束付き最小二乗法を用いたスペクトル合成法による GaAs/AlAs膜のオージェデプスプロファイルの解析
- First published at
- Creator
- Keyword
- Resource type
- Material/Specimen
- GaAs/AlAs multilayer
- Publisher
- Date published
- 10/12/1992
- Rights statement
- Licensed Date
- 26/10/1992
- Journal
- Language
- Last modified
- 01/10/2021
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表面科学_13_1992_606.pdf | 01/10/2021 | 1.71 MB | MDR Open |
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