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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
Description/Abstract:
Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...
Keyword:
gallium nitride
,
positron
, and
vacancy
Resource Type:
Article
Author:
Akira Uedono
,
Hideki Sakurai
,
Jun Uzuhashi
,
Tetsuo Narita
,
Kacper Sierakowski
,
Shoji Ishibashi
,
Shigefusa F. Chichibu
,
Michal Bockowski
,
Jun Suda
,
Tadakatsu Ohokubo
,
Nobuyuki Ikarashi
,
Kazuhiro Hono
, and
Tetsu Kachi
Journal:
Proceedings of SPIE - The International Society for Optical Engineering
Date Uploaded:
04/10/2023
Date Modified:
04/10/2023
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gallium nitride
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SPIE
1
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Akira Uedono
1
Hideki Sakurai
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Jun Suda
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Proceedings of SPIE - The International Society for Optical Engineering
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