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Description/Abstract:: Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...
Keyword:: gallium nitride, positron, and vacancy
Resource Type:: Article
Author:: Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, and Tetsu Kachi
Journal:: Proceedings of SPIE - The International Society for Optical Engineering
Date Uploaded:: 04/10/2023
Date Modified:: 04/10/2023

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