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[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
Description/Abstract:
A research team at WPI-MANA, using a new fabrication technique, has developed a diamond field-effect transistor with high hole mobility, ...
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hexagonal boron nitride
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wide bandgap
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Article
Author:
International Center for Materials Nanoarchitectonics (WPI-MANA)
Date Uploaded:
18/12/2022
Date Modified:
19/12/2022
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