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[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility
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A research team at WPI-MANA, using a new fabrication technique, has developed a diamond field-effect transistor with high hole mobility, which can lead to reduced conduction loss and higher operational speeds.
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- 19/12/2022
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[Vol. 78]New Diamond Transistor Exhibits High Hole Mobility_WPI-MANA.pdf | 137 KB | MDR Open |
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