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Filtering by: Keyword hBN/h-BN Keyword hexagonal boron nitride Resource type Article

[Research Highlights Vol.78] New Diamond Transistor Exhibits High Hole Mobility

Description/Abstract:

A research team at WPI-MANA, using a new fabrication technique, has developed a diamond field-effect transistor with high hole mobility, ...

Keyword:

diamond, field-effect transistor, graphite, hBN, hBN/h-BN, hexagonal boron nitride, hydrogen-terminated, mobility, and wide bandgap

Resource Type:

Article

Author:

International Center for Materials Nanoarchitectonics (WPI-MANA)

Date Uploaded:

18/12/2022

Date Modified:

19/12/2022