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Description/Abstract:: A research team at WPI-MANA, using a new fabrication technique, has developed a diamond field-effect transistor with high hole mobility, ...
Keyword:: diamond, field-effect transistor, graphite, hBN, hBN/h-BN, hexagonal boron nitride, hydrogen-terminated, mobility, and wide bandgap
Resource Type:: Article
Author:: International Center for Materials Nanoarchitectonics (WPI-MANA)
Date Uploaded:: 18/12/2022
Date Modified:: 19/12/2022

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