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etching
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Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching
Description/Abstract:
Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized as etch pits on the surface. We found that etch pits were formed ...
Keyword:
dislocation
,
etching
, and
α-Ga2O3
Resource Type:
Article
Author:
Yuichi Oshima
,
Shingo Yagyu
, and
Takashi Shinohe
Journal:
JOURNAL OF CRYSTAL GROWTH
Date Uploaded:
22/01/2024
Date Modified:
23/01/2024
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Description/Abstract:
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:
Ga2O3
,
HCl
, and
etching
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
APPLIED PHYSICS LETTERS
Date Uploaded:
21/11/2023
Date Modified:
27/11/2023
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etching
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Ga2O3
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HCl
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dislocation
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English
2
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AIP Publishing
1
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
1
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
1
Author
Yuichi Oshima
2
Shingo Yagyu
1
Takashi Shinohe
1
Takayoshi Oshima
1
Journal
APPLIED PHYSICS LETTERS
1
JOURNAL OF CRYSTAL GROWTH
1