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[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K

Description/Abstract:

A team at MANA has demonstrated a highly temperature-stable GaN resonator that boasts high-frequency stability, high Q factor and the pot...

Keyword:

Strain, AlN, GaN, MEMS, NEMS, Si, energy storage, and temperature coefficient of frequency

Resource Type:

Article

Author:

International Center for Materials Nanoarchitectonics (WPI-MANA)

Date Uploaded:

18/12/2022

Date Modified:

19/12/2022