Publication
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
MDR Open Deposited
- In Collection:
A team at MANA has demonstrated a highly temperature-stable GaN resonator that boasts high-frequency stability, high Q factor and the potential for large-scale integration with silicon technology.
- DOI
- First published at
- Creator
- Keyword
- Resource type
- Rights statement
- Manuscript type
- Version of record (Published version)
- Language
- Last modified
- 19/12/2022
Items
Thumbnail | Title | Date Uploaded | Size | Visibility | Actions |
---|---|---|---|---|---|
[Vol. 68]New GaN MEMS Resonator Is Temperature-Stable up to 600 K_ WPI-MANA.pdf | 167 KB | MDR Open |
|