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Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway
Description/Abstract:
Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures offer promising alternative materials for next-ge...
Keyword:
IGZO
,
contact resistance
,
hydrogen
,
oxide semiconductors
,
palladium
, and
thin-film transistors
Resource Type:
Article
Author:
Yuhao Shi
,
Masatake Tsuji
,
Hanjun Cho
,
Shigenori Ueda
,
Junghwan Kim
, and
Hideo Hosono
Journal:
ACS Nano
Date Uploaded:
08/04/2024
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American Chemical Society (ACS)
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Creative Commons BY Attribution 4.0 International
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Hanjun Cho
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Hideo Hosono
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Ministry of Education, Culture, Sports, Science and Technology
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Samsung Electronics Co, Ltd.
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ACS Nano
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