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Pt/GaN Schottky barrier height lowering by incorporated hydrogen
Description/Abstract:
Changes in the hydrogen-induced Schottky barrier height (ΦB) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investi...
Keyword:
GaN
,
Schottky barrier height
, and
hydrogen
Resource Type:
Article
Author:
色川 芳宏
,
大井 暁彦
,
生田目 俊秀
, and
小出 康夫
Journal:
ECS Journal of Solid State Science and Technology
Date Uploaded:
10/04/2024
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
Description/Abstract:
Enhancement of energy resolution due to evolution of monochromators has made electron energy loss spectroscopy (EELS) in transmission ele...
Keyword:
4D-STEM
,
ABF-STEM
,
EELS
,
GaN
,
HAADF-STEM
,
HAXPES
, and
defect
Resource Type:
Article
Author:
Shunsuke Yamashita
,
Sei Fukushima
,
Jun Kikkawa
,
Ryoji Arai
,
Yuya Kanitani
,
Koji Kimoto
, and
Yoshihiro Kudo
Journal:
APL Materials
Date Uploaded:
19/03/2024
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
Description/Abstract:
A team at MANA has demonstrated a highly temperature-stable GaN resonator that boasts high-frequency stability, high Q factor and the pot...
Keyword:
Strain
,
AlN
,
GaN
,
MEMS
,
NEMS
,
Si
,
energy storage
, and
temperature coefficient of frequency
Resource Type:
Article
Author:
International Center for Materials Nanoarchitectonics (WPI-MANA)
Date Uploaded:
18/12/2022
Date Modified:
19/12/2022
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International Center for Materials Nanoarchitectonics (WPI-MANA)
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