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Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers
Description/Abstract:
Molecular-beam epitaxy of InSb on the (111)A-oriented GaAs substrates has been studied using electron diffraction, x-ray diffraction, and...
Keyword:
GaAs
,
InAs
,
InSb
,
Metamorphic
, and
Molecular beam epitaxy
Resource Type:
Article
Author:
Akihiro Ohtake
and
Takaaki Mano
Journal:
Japanese Journal of Applied Physics
and
JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:
13/02/2024
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GaAs
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1
InAs
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InSb
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Metamorphic
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Molecular beam epitaxy
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English
1
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IOP Publishing
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
1
Author
Akihiro Ohtake
1
Takaaki Mano
1
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
1
Japanese Journal of Applied Physics
1