Publication
Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers
MDR Open Deposited
Molecular-beam epitaxy of InSb on the (111)A-oriented GaAs substrates has been studied using electron diffraction, x-ray diffraction, and scanning probe microscopy. The direct growth of InSb on GaAs(111)A results in a cracked morphology with flat terraces and deep gaps, which could be attributed to the extremely large lattice mismatch between InSb and GaAs (14.6 %). When thin (5 – 30 monolayer thickness) InAs films are used as interlayers, more continuous and flat InSb films are obtained.
- First published at
- Creator
- Keyword
- Resource type
- Publisher
- Date published
- 18/01/2024
- Rights statement
- Journal
- Manuscript type
- Version of record (Published version)
- Language
Items
Thumbnail | Title | Date Uploaded | Size | Visibility | Actions |
---|---|---|---|---|---|
Ohtake_2024_Jpn._J._Appl._Phys._63_03SP10.pdf | 1.17 MB | MDR Open |
|