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Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam

Description/Abstract:

磁気ヘッド材料として用いられているFeNi:5 nm/CoFeB:3 nm/FeNi:10 nm多層薄膜の深さ方向組成分布を調べるために，極低角度入射イオンビームを用いたオージェ深さ方向分析によりイオン加速電圧0.5 kVおよび3.0 kVのスパッタ条件で分析を行った．その...

Keyword:

Auger Depth Profiling Analysis, Ultra Low Angle Incidence Ion Beam, and FeNi/CoFeB/FeNi Thin Film

Material/Specimen:

FeNi/CoFeB/FeNi Thin Film

Resource Type:

Article

Author:

Ogiwara, Toshiya, Yanagiuchi, Katsuaki, and Yoshikawa, Hideki

Journal:

Journal of Surface Analysis

Date Uploaded:

28/05/2021

Date Modified:

04/06/2021
InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性

Description/Abstract:

InP/GaInAsP多層膜を用いて，AES深さ方向分析における深さ分解能の試料温度依存性について検討を行なった．試料温度は，０〜５０℃（１０℃間隔）およびー１２０，−２０℃の８条件としてデプスプロファイルを取得した．スパッタリング条件は，イオン種：Ar，イオン加速電圧：1...

Keyword:

InP/GaInAsP多層膜, Auger Depth Profiling Analysis, Depth Resolution, and Sample Temperature

Material/Specimen:

InP/GaInAsP Multilayer Film

Resource Type:

Article

Author:

Ogiwara, Toshiya and Tanuma, Shigeo

Journal:

Journal of Surface Analysis

Date Uploaded:

28/05/2021

Date Modified:

28/05/2021

Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam

InP/GaInAsP多層膜におけるAES深さ分解能の温度依存性

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