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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Description/Abstract:

Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into ...

Keyword:

gallium nitride, positron, and vacancy

Resource Type:

Article

Author:

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, and Tetsu Kachi

Journal:

Proceedings of SPIE - The International Society for Optical Engineering

Date Uploaded:

04/10/2023

Date Modified:

04/10/2023