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Filtering by: Journal JOURNAL OF CRYSTAL GROWTH Publisher Elsevier BV Resource type Article

1. Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching

Description/Abstract:: Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized as etch pits on the surface. We found that etch pits were formed ...
Keyword:: dislocation, etching, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Shingo Yagyu, and Takashi Shinohe
Journal:: JOURNAL OF CRYSTAL GROWTH
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024

2. Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy

Description/Abstract:: We demonstrate the high-speed growth of b-Ga2O3 epilayers on off-angled sapphire (0001) substrates by the halide vapor epitaxy. (-201) or...
Keyword:: heteroepitaxy and β-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Encarnaciόn G. Vίllora, and Kiyoshi Shimamura
Journal:: JOURNAL OF CRYSTAL GROWTH
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024