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Filtering by: Journal JAPANESE JOURNAL OF APPLIED PHYSICS Keyword GaAs

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

Description/Abstract:

Molecular-beam epitaxy of InSb on the (111)A-oriented GaAs substrates has been studied using electron diffraction, x-ray diffraction, and...

Keyword:

GaAs, InAs, InSb, Metamorphic, and Molecular beam epitaxy

Resource Type:

Article

Author:

Akihiro Ohtake and Takaaki Mano

Journal:

Japanese Journal of Applied Physics and JAPANESE JOURNAL OF APPLIED PHYSICS

Date Uploaded:

13/02/2024