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Filtering by: Journal JAPANESE JOURNAL OF APPLIED PHYSICS Type of work Publication Language English

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs inter...

In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...

Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography