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Filtering by: Journal Applied Physics Letters Funder Japan Atomic Energy Agency Funder Ministry of Education, Culture, Sports, Science and Technology

1. Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Description/Abstract:: Snドープ β-Ga2O3(001)のドーパントの原子位置を光電子ホログラフィ法により明らかにした。
Keyword:: Ga2O3, b-Ga2O3, and dopant
Resource Type:: Article
Author:: Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, and Yoshiyuki Yamashita
Journal:: Applied Physics Letters
Date Uploaded:: 19/03/2024