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Filtering by: Journal Advanced Science Funder Japan Society for the Promotion of Science Type of work Publication

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Description/Abstract:

Here, electronic-grade phosphorus-doped n-type diamond epilayer with anatomically flat surface based on step-flow nucleation mode is fabr...

Keyword:

Diamond, n-type, MOSFET

Resource Type:

Article

Author:

Meiyong Liao, Huanying Sun, and Satoshi Koizumi

Journal:

Advanced Science

Date Uploaded:

09/04/2024