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High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

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Here, electronic-grade phosphorus-doped n-type diamond epilayer with anatomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around150 cm2 /V-sec at 573 K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.

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  • 20/01/2024
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  • Funder identifier
    15H03999
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    Japan Society for the Promotion of Science
    Funder identifier
    22K18957
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    Japan Society for the Promotion of Science
    Funder identifier
    20H02212
    Funder name
    Japan Society for the Promotion of Science

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