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Filtering by: Author Yuichi Oshima Journal APPLIED PHYSICS LETTERS Resource type Article

1. Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications

Description/Abstract:: パワー、およびUV応用を指向したα型酸化ガリウムの関連技術の現状と技術課題を俯瞰し、今後の展望を述べる。
Keyword:: epitaxy, power device, and α-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima and Elaheh Ahmadi
Journal:: APPLIED PHYSICS LETTERS
Date Uploaded:: 29/01/2024
Date Modified:: 01/02/2024

2. Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

Description/Abstract:: In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The et...
Keyword:: Ga2O3, HCl, and etching
Resource Type:: Article
Author:: Takayoshi Oshima and Yuichi Oshima
Journal:: APPLIED PHYSICS LETTERS
Date Uploaded:: 21/11/2023
Date Modified:: 27/11/2023