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Shinya Takashima
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Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer
Description/Abstract:
An area selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conv...
Keyword:
atom probe tomography
,
cathodoluminescence
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
Article
Author:
Jun Uzuhashi
,
Jun Chen
,
Ryo Tanaka
,
Shinya Takashima
,
Masaharu Edo
,
Tadakatsu Ohkubo
, and
Takashi Sekiguchi
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
02/08/2024
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Description/Abstract:
For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...
Keyword:
GaN
Resource Type:
Article
Author:
Shigefusa F. Chichibu
,
Kohei Shima
,
Akira Uedono
,
Shoji Ishibashi
,
Hiroko Iguchi
,
Tetsuo Narita
,
Keita Kataoka
,
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masaharu Edo
,
Hirotaka Watanabe
,
Atsushi Tanaka
,
Yoshio Honda
,
Jun Suda
,
Hiroshi Amano
,
Tetsu Kachi
,
Toshihide Nabatame
,
Yoshihiro Irokawa
, and
Yasuo Koide
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
09/05/2024
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Description/Abstract:
GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...
Keyword:
atom probe tomography
,
gallium nitride
, and
transmission electron microscopy
Resource Type:
ProceedingsArticle
Author:
Ryo Tanaka
,
Shinya Takashima
,
Katsunori Ueno
,
Masahiro Horita
,
Jun Suda
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
, and
Masaharu Edo
Date Uploaded:
19/04/2024
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Description/Abstract:
An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:
atom probe tomography
,
cathodoluminescence
,
gallium nitride
,
implantation
, and
scanning transmission electron microscopy
Resource Type:
Article
Author:
Jun Uzuhashi
,
Jun Chen
,
Ashutosh Kumar
,
Wei Yi
,
Tadakatsu Ohkubo
,
Ryo Tanaka
,
Shinya Takashima
,
Masaharu Edo
,
Kacper Sierakowski
,
Michal Bockowski
,
Hideki Sakurai
,
Tetsu Kachi
,
Takashi Sekiguchi
, and
Kazuhiro Hono
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
04/07/2023
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transmission electron microscopy
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2
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3
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Masaharu Edo
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