Index Catalog // MDR

Description/Abstract:: For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...
Keyword:: GaN
Resource Type:: Article
Author:: Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, and Yasuo Koide
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 09/05/2024

Description/Abstract:: GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS g...
Keyword:: atom probe tomography, gallium nitride, and transmission electron microscopy
Resource Type:: ProceedingsArticle
Author:: Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, and Masaharu Edo
Date Uploaded:: 19/04/2024

Description/Abstract:: An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:: atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy
Resource Type:: Article
Author:: Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 04/07/2023

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