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Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Description/Abstract:

By far, despite the progress, there are no related reports on the construction of oxide heterojunction (HJ) based on electrospinning. Thu...

Keyword:

Dual-Channel and Transistors

Resource Type:

Article

Author:

Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, and Rodrigo Martins

Journal:

Advanced Electronic Materials

Date Uploaded:

05/10/2023

Date Modified:

05/10/2023